HF10-12S transistor equivalent, npn silicon rf power transistor.
* PG = 20 dB min. at 10 W/30 MHz
* IMD3 = -30 dBc max. at 10 W (PEP)
* Omnigold™ Metalization System
B
C E
ØC
E B
H I J
D
MAXIMUM RATINGS
IC VCBO VCEO V.
The ASI HF10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
* PG = 20 dB min. at 10 W/30 MHz
* IMD3 = -30 dBc max. at 10 W (PEP)
* Omnigold™ Metalization System
B
C E
ØC
E B
H I J
D
MAXIMUM RATINGS
IC VCBO VCE.
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